Examination of electrical and optical properties of vanadium in bulk n-type silicon carbide

Deep level transient spectroscopy of n-type silicon carbide shows deep traps, caused by vanadium atoms. Lines in the IR spectrum in the same spectral range of 7000-7700 per cm confirm this. The presence of vanadium atoms is identified to be a bulk defect, occurring at Ec-0.71 eV. It results in the formation of semi-insulating substrates and the reduction in the lifetime of minority carriers.