Influence of Si[O.sub.2] dielectric preparation on interfacial trap density in pentacene-based organic thin-film transistors

A combination of solvent cleaning and oxygen plasma cleaning processes is used to study and explain the effects of Si[O.sub.2] dielectric preparation on interfacial trap density in pentacene-based organic thin-film transistors. The reduction in the organic contamination at the semiconductor/dielectric interface following the plasma cleaning, leading to a reduction in the trapping states, is found to improve the threshold voltage of the devices.