Influence of impurities and structural properties on the device stability of pentacene thin film transistors

Several electrical in situ and ex situ measurements are conducted to study the influence of various environmental conditions, like dry oxygen and moisture on the electronic transport and device stability of the polycrystalline pentacene transistors. The analysis reveals that such conditions inhibits the injection of holes in the highest occupied molecular orbital level of the film, which further leads to an apparent reduction of the charge carrier mobility, as well as the threshold voltage.