Stress migration phenomenon in narrow copper interconnects

Various test patterns are used to analyze the stress migration (SM) behavior in narrow copper (Cu) damascene interconnects, connecting in narrow or wide lines. The results of the analysis shows that the SM phenomenon in such lines is highly affected by the placing of the vias at the edge of the M1 line, which is then used to explain the effect of the via arrangement close to the edge of the lower lines on the SM failure in the interconnects.