Morphology of basal plane dislocations in 4H-SiC homoepitaxial layers grown by chemical vapor deposition

The morphology of basal plane dislocations (BPDs) in 4H-SiC homoepitaxial layers was investigated using plane-view transmission x-ray topography and molten KOH etching. Based on the morphologies three types of BPDs are distinguished which include interfacial dislocations, curved dislocations and circular loop dislocations around micropipes.