Back to Search
Start Over
Impacts of growth parameters on deep levels in n-type 4H-SiC
- Source :
- Journal of Applied Physics. March 1, 2007, Vol. 101 Issue 5, p053709-1, 4 p.
- Publication Year :
- 2007
-
Abstract
- The effects of growth parameters on deep levels in n-type 4H-SiC were investigated by deep level transient spectroscopy. It was seen that the formation of Z1/2 and EH6/7 centers were guided by the C/Si ratio and growth temperature rather than the growth rate.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 101
- Issue :
- 5
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.165090204