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Impacts of growth parameters on deep levels in n-type 4H-SiC

Authors :
Danno, Katsunori
Hori, Tsutomu
Kimoto, Tsunenobu
Source :
Journal of Applied Physics. March 1, 2007, Vol. 101 Issue 5, p053709-1, 4 p.
Publication Year :
2007

Abstract

The effects of growth parameters on deep levels in n-type 4H-SiC were investigated by deep level transient spectroscopy. It was seen that the formation of Z1/2 and EH6/7 centers were guided by the C/Si ratio and growth temperature rather than the growth rate.

Subjects

Subjects :
Spectrum analysis -- Usage
Silicon compounds -- Research
Silicon compounds -- Thermal properties
Physics

Details

Language :
English
ISSN :
00218979
Volume :
101
Issue :
5
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.165090204

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