Optical properties of InGaN quantum dots grown by Si[N.sub.x] nanomasks

Authors :: L.L. Huang
H.J. Chang
Y.Y. Chou
C.H. Wang
T.T. Chen
Y.F. Chen
J.Y. Tsai
S.C. Wang
H.C. Kuo
Source :: Journal of Applied Physics. April 15, 2007, Vol. 101 Issue 8, p083501-1, 5 p.
Publication Year :: 2007
Abstract: Atomic force microscopy, photoluminescence (PL), and photoluminescence excitation (PLE) measurements were used to investigate the InGaN quantum dots (QDs) deposited on Si[N.sub.x] nanomasks. It was found that the size of QDs could be controlled by Si[N.sub.x] nanomasks, enabling the manipulation of quantum confinement effect.