The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 [mu]m followed by photoreflectance spectroscopy

Authors :: Rudno-Rudzinski, W.
Sek, G.
Misiewicz, J.
Lamas, T.E.
Quivy, A.A.
Source :: Journal of Applied Physics. April 1, 2007, Vol. 101 Issue 7, p073518-1, 4 p.
Publication Year :: 2007
Abstract: The optical properties of InAs/GaAs quantum well (QW) structures were studied by photoreflectance (PR) modulation spectroscopy, photoluminescence (PL) and atomic force microscopy. The transitions connected with a thin InAs/GaAs QW are visible for all samples.

Subjects :: Gallium arsenide -- Atomic properties
Gallium arsenide -- Optical properties
Indium -- Optical properties
Indium -- Atomic properties
Atomic force microscopy -- Usage
Physics

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