Selective deposition of silicon at room temperature using dc microplasmas

This paper reports deposition of silicon at elevated and room temperatures in spatially localized areas of a microchip by plasma-enhanced chemical vapor deposition using microplasmas. The microplasmas are generated by providing dc power to thin-film Ti electrodes patterned on the microchip. Electrode arrangements include configurations in which multiple cathode elements share a single anode. At the operating pressures used, the plasma glow is confined to the region directly over the energized cathodes only, and the deposition is localized to these regions. A silane ambient allows Si to be deposited at 6.7-15.9 nm/min using cathode power densities of 3.65-9.35 W/[cm.sup.2], with the substrate heated to 300 [degrees]C. At room temperature, deposition rates up to 4.2 nm/min are realized. Also described is a plasma-coupling technique that permits isolated metal pads to be powered by plasma spreading from a proximate cathode at certain levels of power and pressure. This permits controlled variations of silicon thickness in a subarray of unbiased electrodes, simplifying the powering scheme. Index Terms--Plasma-enhanced chemical vapor deposition (PECVD), polysilicon, thin-film deposition.