Cite
Study of the drain leakage current in bottom-gated nanocrystalline silicon thin-film transistors by conduction and low frequency noise measurements
MLA
Hatzopoulos, Argyrios T., et al. “Study of the Drain Leakage Current in Bottom-Gated Nanocrystalline Silicon Thin-Film Transistors by Conduction and Low Frequency Noise Measurements.” IEEE Transactions on Electron Devices, vol. 54, no. 5, May 2007, p. 1076. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.167191008&authtype=sso&custid=ns315887.
APA
Hatzopoulos, A. T., Arpatzanis, N., Tassis, D. H., Dimitriadis, C. A., Oudwan, M., Templier, F., & Kamarinos, G. (2007). Study of the drain leakage current in bottom-gated nanocrystalline silicon thin-film transistors by conduction and low frequency noise measurements. IEEE Transactions on Electron Devices, 54(5), 1076.
Chicago
Hatzopoulos, Argyrios T., Nikolaos Arpatzanis, Dimitrios H. Tassis, Charalabos A. Dimitriadis, Maher Oudwan, Francois Templier, and George Kamarinos. 2007. “Study of the Drain Leakage Current in Bottom-Gated Nanocrystalline Silicon Thin-Film Transistors by Conduction and Low Frequency Noise Measurements.” IEEE Transactions on Electron Devices 54 (5): 1076. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.167191008&authtype=sso&custid=ns315887.