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A deterministic approach to RF noise in silicon devices based on the Langevin-Boltzmann equation
- Source :
- IEEE Transactions on Electron Devices. May, 2007, Vol. 54 Issue 5, p1185, 8 p.
- Publication Year :
- 2007
-
Abstract
- A new deterministic approach to electron noise based on a spherical harmonics expansion (SHE) of Langevin-Boltzmann equation in the frequency domain for silicon devices is presented. This approach has many advantages including that it can handle the full frequency range from zero to terahertz, low current levels, and slow processes.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 54
- Issue :
- 5
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.167193967