Study of a new field-effect resistive hydrogen sensor based on a Pd/oxide/AlGaAs transistor

Authors :: Ching-Wen Hung
Hung-Chi Chang
Yan-Ying Tsai
Po-Hsien Lai
Ssu-I Fu
Tzu-Pin Chen
Huey-Ing Chen
Wen Chau Liu
Source :: IEEE Transactions on Electron Devices. May, 2007, Vol. 54 Issue 5, p1224, 8 p.
Publication Year :: 2007
Abstract: A new field-effect resistive hydrogen sensor, based on the current-voltage characteristics in the linear region of an AlGaAs-based psuedomorphic high-electron-mobility transistor structure and high hydrogen sensitivity of a palladium metal, is studied. This studied resistive sensor shows that it provides the promise for low-power GaAs-based electronic and microelectromechanical-system applications.

Subjects :: Palladium -- Electric properties
High-electron-mobility transistors -- Electric properties
High-electron-mobility transistors -- Research
Gallium arsenide -- Electric properties
Business
Electronics
Electronics and electrical industries

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