Simulation and optimization of diode and insulated gate bipolar transistor interaction in a chopper cell using MATLAB and Simulink

Recently, a simulation method for power electronic devices has emerged, which has high accuracy and short run times based on a Fourier model of the device physics. This paper describes the use of the Fourier models for diodes and insulated gate bipolar transistors (IGBTs) and implementation in MATLAB and Simulink in a formal optimization strategy. In particular, this paper investigates coupled circuit, diode, and IGBT behavior. Conclusions are drawn concerning device loading and circuit design, particularly the role of stray inductance. Index Terms--Circuit modeling, diode, insulated gate bipolar transistor (IGBT), MATLAB, optimization, physics-based semiconductor device models, power semiconductor modeling, simulation, Simulink.