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Impact of scaling on the inverse-mode operation of SiGe HBTs

Authors :
Appaswamy, Aravind
Bellini, Marco
Wei-Min Mance Kuo
Peng Cheng
Jiahui Yuan
Chendong Zhu
Cressler, John D.
Guofu Niu
Josehp, Alvin J.
Source :
IEEE Transactions on Electron Devices. June, 2007, Vol. 54 Issue 6, p1492, 10 p.
Publication Year :
2007

Abstract

The inverse mode performance of four distinct generations of SiGe HBTs is investigated and is found to improve impressively with generational scaling. Results show that the improved inverse mode performance with scaling would allow for improved design flexibility and could potentially be use to design novel circuits where speed is not the major driving factor.

Details

Language :
English
ISSN :
00189383
Volume :
54
Issue :
6
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.167726930