Transient response of semiconductor electronics to ionizing radiation. Recent developments in charge-collection measurement

Recent measurements of heavy-ion-induced charge-collection transients are presented. These measurements are possible for the first time because of recent developments in highbandwidth, single-shot measurement technology, and exhibit several significant advantages over conventional (charge-sensitive preamplifier) charge-collection measurements. Heavy-ion induced transient measurements are presented for InGaAs/InAIAs HEMTs, AISb/InAs HEMTs, GaAs HFETs and for SOI NMOS devices, and the significant advantages of this approach are described. Index Terms--AISb/InAs HEMT, charge collection, InGaAs HEMT, laser SEE, single event effects, SOI, transient measurement.