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Influence of dislocation loops on the near-infrared light emission from silicon diodes
- Source :
- IEEE Transactions on Electron Devices. August, 2007, Vol. 54 Issue 8, p1860, 7 p.
- Publication Year :
- 2007
-
Abstract
- The impact of dislocation loops on the infrared light emission from silicon light-emitting diodes (LEDs) is examined. Results suggest a strong variation in the density and physical location of implantation-originated dislocation loops observed in the resulting diodes.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 54
- Issue :
- 8
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.168280008