Schottky barrier heights of In(x)Al(1-x)As (0 less than or equal to x less than or equal to 0.35) epilayers on GaAs

Authors :: Chyi, J.-I.
Shieh, J.-L.
Lin, R.-J.
Pan, J.-W.
Lin, R.-M.
Source :: Journal of Applied Physics. Feb 15, 1995, Vol. 77 Issue 4, p1813, 3 p.
Publication Year :: 1995
Abstract: Capacitance-voltage and current-voltage measurements are performed on Al Schottky diodes on n-type InAlAs to determine their electrical characteristics. The InAlAs epilayers are grown by step-graded buffers, subjected to ambient growth conditions, on GaAs substrates. The Al content is directly proportional to the Schottky barrier height in the diodes.

Subjects :: Diodes, Schottky-barrier -- Research
Gallium arsenide -- Research
Physics

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