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Physics-based modeling of hole inversion-layer mobility in strained-SiGe-on-insulator

Authors :
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
Source :
IEEE Transactions on Electron Devices. Sept, 2007, Vol. 54 Issue 9, p2174, 9 p.
Publication Year :
2007

Abstract

A microscopic approach to model the hole inversion-layer mobility of strained-SiGe homo- and heterostructure-on-insulator in ultrathin-body MOSFET is presented.

Subjects

Subjects :
Metal oxide semiconductor field effect transistors -- Design and construction
Silicon-on-isolator -- Analysis
Dielectric films -- Electric properties
Thin films -- Electric properties
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
54
Issue :
9
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.169942813

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