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Empirical depth profile simulator for ion implantation in 6H-alpha-SiC
- Source :
- Journal of Applied Physics. June 15, 1995, Vol. 77 Issue 12, p6194, 7 p.
- Publication Year :
- 1995
- Subjects :
- Ion bombardment -- Research
Silicon carbide -- Electric properties
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 77
- Issue :
- 12
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.17103431