Growth and thermal decomposition of ultrathin ion-beam deposited C:H films

Thick hydrogenated carbon films, C:H, are prepared by the process of deposition of several monolayers an appropriate target by the ion beam deposition technique. The initial growth of the film requires a low Z buffer layer with a platinum like material as catalyst. The thin C:H the ion energy to 100 electron volts at a substrate temperature of 350 K.