Back to Search
Start Over
Semiconducting rhenium silicide thin films on Si(111)
- Source :
- Journal of Applied Physics. March 15, 1995, Vol. 77 Issue 6, p2514, 5 p.
- Publication Year :
- 1995
-
Abstract
- The study of the electronic, crystallographic and optical properties of thin ReSi2 films reveals that the films have a faint pattern when annealed at 750 degrees Celsius. The thickness of the films increases the clarity of the pattern on a bright background. The ReSi2 composition is achieved when the valence band edge shifts from a higher to a lower binding energy state.
- Subjects :
- Semiconductor films -- Research
Silicides -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 77
- Issue :
- 6
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.17149452