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Semiconducting rhenium silicide thin films on Si(111)

Authors :
Tan, T.A. Nguyen
Veuillen, J.Y.
Muret, P.
Kennou, S.
Siokou, A.
Ladas, S.
Razafindramisa, F. Lahatra
Brunel, M.
Source :
Journal of Applied Physics. March 15, 1995, Vol. 77 Issue 6, p2514, 5 p.
Publication Year :
1995

Abstract

The study of the electronic, crystallographic and optical properties of thin ReSi2 films reveals that the films have a faint pattern when annealed at 750 degrees Celsius. The thickness of the films increases the clarity of the pattern on a bright background. The ReSi2 composition is achieved when the valence band edge shifts from a higher to a lower binding energy state.

Details

ISSN :
00218979
Volume :
77
Issue :
6
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.17149452