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Electrical properties of [Al.sub.2][O.sub.3]/4H-SiC structures grown by atomic layer chemical vapor deposition

Authors :
Avice, Marc
Grossner, Ulrike
Pintilie, Ioana
Svensson, Bengt G.
Servidori, Marco
Nipoti, Roberta
Nilsen, Ola
Fjellvag, Helmer
Source :
Journal of Applied Physics. Sept 1, 2007, Vol. 102 Issue 5, 054513-1-054513-7
Publication Year :
2007

Abstract

The electrical characteristics and thermal stability of [Al.sub.2][O.sub.3] gate oxide layers deposited by atomic layer chemical vapor deposition (ALCVD) on 4H-SiC are described. The results have shown a decreasing flatband voltage with increasing annealing time, which has indicated decrease of oxide charges and deep interface traps.

Details

Language :
English
ISSN :
00218979
Volume :
102
Issue :
5
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.171565829