Electrical properties of [Al.sub.2][O.sub.3]/4H-SiC structures grown by atomic layer chemical vapor deposition

The electrical characteristics and thermal stability of [Al.sub.2][O.sub.3] gate oxide layers deposited by atomic layer chemical vapor deposition (ALCVD) on 4H-SiC are described. The results have shown a decreasing flatband voltage with increasing annealing time, which has indicated decrease of oxide charges and deep interface traps.