Ultralow k using a plasma enhanced chemical vapor deposition porogen approach: matrix structure and porogen loading influences

The hybrid deposition is performed by plasma enhanced chemical vapor deposition and an appropriate matrix structure is used for studying the effect of the porogen loading on the porosity creating. A porous a-SiOCH film is obtained with an ultralow k value of 2.3 by using the porous a-SiOCH structure and porogen loading.