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Physical modeling of fast p-i-n diodes with carrier lifetime zoning, Part II: parameter extraction
- Source :
- IEEE Transactions on Power Electronics. Jan, 2008, Vol. 23 Issue 1, p198, 8 p.
- Publication Year :
- 2008
-
Abstract
- In this paper, a parameter extraction procedure for high-voltage diodes with local lifetime control is proposed. It is designed for use with the physics-based diode model described in Part I, which is capable of simulating diodes with local lifetime control. The parameter extraction procedure described requires a forward characteristic and a reverse recovery measurement. The parameter extraction procedure is illustrated using finite-element simulations. The physics-based model using the parameters extracted is then compared with experimental results. Index Terms--Lifetime control, physics-based model, p-i-n diode model, power semiconductor modeling, variable lifetime.
Details
- Language :
- English
- ISSN :
- 08858993
- Volume :
- 23
- Issue :
- 1
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Power Electronics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.174282883