Recombination centers in as-grown and electron-irradiated ZnO substrates

Authors :: Son, N.T.
Ivanov, I.G.
Kuznetsov, A.
Svensson, B.G.
Zhao, Q.X.
Willander, M.
Morishita, N.
Ohshima, T.
Itoh, H.
Isoya, J.
Janzen, E.
Yakimova, R.
Source :: Journal of Applied Physics. Nov 1, 2007, Vol. 102 Issue 9, p093504-1, 5 p.
Publication Year :: 2007
Abstract: The optical detection of magnetic resonance (ODMR) is used to observe the defects in ZnO substrates irradiated with 3 MeV electrons at room temperature. The Zn centers labeled as LU3/LU4 acting as dominating recombination centers in irradiated and as-grown ZnO are found to be related to intrinsic defects.