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Growth and characterization of GaP nanowires on Si substrates

Authors :
Tateno, K.
Sogawa, T.
Nakano, H.
Source :
Journal of Applied Physics. Jan 1, 2008, Vol. 103 Issue 1, 014301-1-014301-8
Publication Year :
2008

Abstract

The growth and structural aspects of GaP nanowires (NWs) grown on Si substrate in a metalorganic vapor phase epitaxy system are studied. The analysis of the GaP/Si interface by transmission electron microscopy has shown that the NWs are epitaxially grown on the Si(111) substrate.

Subjects

Subjects :
Epitaxy -- Research
Gallium compounds -- Structure
Gallium compounds -- Optical properties
Phosphorus compounds -- Structure
Phosphorus compounds -- Optical properties
Transmission electron microscopes -- Observations
Physics

Details

Language :
English
ISSN :
00218979
Volume :
103
Issue :
1
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.175215870

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