Electrical properties of [La.sub.2][O.sub.3] and Hf[O.sub.2]/[La.sub.2][O.sub.3] gate dielectrics for germanium metal-oxide-semiconductor devices

The dielectric quality of [La.sub.2][O.sub.3] and its interface with Ge is examined as a function of growth temperature and postdeposition annealing (PDA) conditions. [La.sub.2][O.sub.3] has played the role of an efficient passivating layer in more complex gate stacks for Ge devices.