Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

Deep sub-micrometer devices, such as logic CMOS ULSI, are constructed using a new technology known as mono-silicidation technology. The device made using this technology has shown better transistor characteristics and propagation delay time than those of titanium salicide. This is because, polysilicon and single-silicon layers have lower contact resistance and sheet resistance. The details of use of nickel-monosilicide technology in making deep sub-micron CMOS are given.