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Threshold voltage model of short-channel FD-SOI MOSFETs with vertical Gaussian profile
- Source :
- IEEE Transactions on Electron Devices. March, 2008, Vol. 55 Issue 3, p803, 7 p.
- Publication Year :
- 2008
-
Abstract
- A novel approximation of 2-dimensional (2-D) potential function perpendicular to the channel for the fully depleted (FD) silicon-on-insulator (SOI) MOSFETs on films with vertical Gaussian profile and an analytical threshold voltage model are derived. This model has represented a feasible way to find the threshold voltage and has provided reference points in developing new 2-D models for nonuniform FD-SOI devices.
- Subjects :
- Embedded systems -- Design and construction
Embedded systems -- Analysis
Metal oxide semiconductor field effect transistors -- Design and construction
Metal oxide semiconductor field effect transistors -- Analysis
Silicon-on-isolator -- Design and construction
Silicon-on-isolator -- Analysis
Voltage -- Measurement
Embedded system
System on a chip
Business
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 3
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.176716609