Threshold voltage variation in SOI Schottky-barrier MOSFETs

MLA

Min Zhang, et al. “Threshold Voltage Variation in SOI Schottky-Barrier MOSFETs.” IEEE Transactions on Electron Devices, vol. 55, no. 3, Mar. 2008, p. 858. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.176716945&authtype=sso&custid=ns315887.

APA

Min Zhang, Knoch, J., Shi-Li Zhang, Feste, S., Schroter, M., & Mantl, S. (2008). Threshold voltage variation in SOI Schottky-barrier MOSFETs. IEEE Transactions on Electron Devices, 55(3), 858.

Chicago

Min Zhang, Joachim Knoch, Shi-Li Zhang, Sebastian Feste, Michael Schroter, and Siegfried Mantl. 2008. “Threshold Voltage Variation in SOI Schottky-Barrier MOSFETs.” IEEE Transactions on Electron Devices 55 (3): 858. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.176716945&authtype=sso&custid=ns315887.