Ultrafast crystallization and thermal stability of In-Ge doped eutectic [Sb.sub.70]Te.sub.30] phase change material

A study was conducted to examine the effect of In and Ge doping in the form of [In.sub.2][Ge.sub.8][Sb.sub.85][Te.sub.5] on optical and thermal properties of eutectic [Sb.sub.70][Te.sub.30] alloys. The use of ultrafast and thermally stable [In.sub.2][Ge.sub.8][Sb.sub.85][Te.sub.5] phase change material as mask layer in aperture-type super-resolution near-field phase change disk was realized to increase the carrier-to-noise ratio and thermal stability.