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Theoretical study of electron confinement in submicrometer GaN HFETs using a thermally self-consistent Monte Carlo method
- Source :
- IEEE Transactions on Electron Devices. April, 2008, Vol. 55 Issue 4, p945, 9 p.
- Publication Year :
- 2008
-
Abstract
- An electron-thermal Monte Carlo (MC) simulator is used for examining electron confinement in a number of GaN heterostructures. Results suggest an enhancement in the influence of self-heating effects due to the better confinement of carriers in the AlGaN/GaN heterostructure field-effect transistor (HFET).
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 4
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.178511118