High current gain hybrid lateral bipolar operation of DMOS transistors

Hybrid operation of a DMOS transistor is a simple process to implement a high gain lateral bipolar transistor, without complex sub-micrometer processing. A hybrid lateral bipolar operation is obtained in the device by using the diffused channel region as base and connecting it to the gate. Current gain higher than 2000 and a cut-off frequency of 1.6 GHz are also achieved.