Direct-current measurements of oxide and interface traps on oxidized silicon

A direct-current current-voltage uses gate-controlled parasitic bipolar junction transistor of a metal-oxide-silicon field-effect transistor in a p/n junction isolation well to study the variations of the oxide and interface trap density. The process of interface and oxide traps on oxidized silicon is discussed. The technique is more effective and dependable than many of the traditional alternating current methods for finding fundamental kinetic rates and transistor degradation mechanism.