Mechanism of the formation of hydrogen-induced interface states for Pt/silicon oxide/Si metal-oxide-semiconductor tunneling diodes

MLA

Kobayashi, H., et al. “Mechanism of the Formation of Hydrogen-Induced Interface States for Pt/Silicon Oxide/Si Metal-Oxide-Semiconductor Tunneling Diodes.” Journal of Applied Physics, vol. 78, no. 11, Dec. 1995, p. 6554. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.18022683&authtype=sso&custid=ns315887.

APA

Kobayashi, H., Iwadate, H., Kogetsu, Y., & Nakato, Y. (1995). Mechanism of the formation of hydrogen-induced interface states for Pt/silicon oxide/Si metal-oxide-semiconductor tunneling diodes. Journal of Applied Physics, 78(11), 6554.

Chicago

Kobayashi, H., H. Iwadate, Y. Kogetsu, and Y. Nakato. 1995. “Mechanism of the Formation of Hydrogen-Induced Interface States for Pt/Silicon Oxide/Si Metal-Oxide-Semiconductor Tunneling Diodes.” Journal of Applied Physics 78 (11): 6554. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.18022683&authtype=sso&custid=ns315887.