Back to Search Start Over

Large magnetoresistance in Si:B-Si[O.sub.2]-Al structures

Authors :
Schoonus, J.J.H.M.
Kohlhepp, J.T.
Swagten, H.J.M.
Koopmans, B.
Source :
Journal of Applied Physics. April 1, 2008, Vol. 103 Issue 7, 07F309-1-07F309-3
Publication Year :
2008

Abstract

A magnetic-field-dependent resistance change of eight orders of magnitude is seen in boron-doped Si-Si[O.sub.2]-Al structures. A magnetic field has suppressed the onset of impact ionization to higher electric fields, which has resulted in large magnetoresistance.

Subjects

Subjects :
Aluminum -- Electric properties
Aluminum -- Magnetic properties
Boron -- Electric properties
Magnetoresistance -- Analysis
Semiconductor doping -- Analysis
Silicon alloys -- Magnetic properties
Silicon alloys -- Electric properties
Physics

Details

Language :
English
ISSN :
00218979
Volume :
103
Issue :
7
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.180679534

Tools

Authors Abstract Subjects Details