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Using x-ray diffraction to identify precipitates in transition metal doped semiconductors

Authors :
Shengqiang Zhou
Potzger, K.
Talut, G.
von Borany, J.
Skorupa, W.
Helm, M.
Fassbender, J.
Source :
Journal of Applied Physics. April 1, 2008, Vol. 103 Issue 7, 07D530-1-07D530-3
Publication Year :
2008

Abstract

The structural and magnetic properties are correlated in order to analyze the formation of transition metal (Co, Ni) and Mn-silicide nanocrystals in semiconductors. The difficulties in probing nanocrystals of small amount are generalized by using x-ray diffraction (XRD) method.

Details

Language :
English
ISSN :
00218979
Volume :
103
Issue :
7
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.181054787