Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions

Subjects

Subjects :

Silicon carbide -- Electric properties
Low temperatures -- Research
Semiconductors -- Junctions
Physics

Details

ISSN :

00218979

Volume :

79

Issue :

1

Database :

Gale General OneFile

Journal :

Journal of Applied Physics

Publication Type :

Academic Journal

Accession number :

edsgcl.18110136