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Evaluation of hot-electron effect on LDMOS device and circuit performances
- Source :
- IEEE Transactions on Electron Devices. June, 2008, Vol. 55 Issue 6, p1519, 5 p.
- Publication Year :
- 2008
-
Abstract
- Laterally double-diffused metal-oxide-semiconductor (LDMOS) transistors subjected to hot-electron stress effects are evaluated. Findings reveal an increase in the gate charge of the LDMOS and a decline in the power efficiency of the full-bridge dc-dc converter after hot-electron stress.
- Subjects :
- Circuit design -- Research
Metal oxide semiconductor field effect transistors -- Design and construction
Electric generators -- Direct current
Electric generators -- Design and construction
Stress analysis (Engineering)
Circuit designer
Integrated circuit design
Business
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 6
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.181171800