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Growth kinetics of ultrathin silicon dixode films formed by oxidation in a N2O ambient
- Source :
- Journal of Applied Physics. Feb 1, 1996, Vol. 79 Issue 3, p1464, 4 p.
- Publication Year :
- 1996
- Subjects :
- Thin films -- Research
Crystals -- Growth
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 79
- Issue :
- 3
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.18153691