Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for n-channel and p-channel MOSFET's

Silicon oxynitride films, formed by a low-pressure rapid thermal chemical vapor deposition (RTCVD) process, are useful as MOS gate dielectrics. The RTCVD uses SiH4, NH3 and N2O as the reactive gases. The deposition is possible at low temperatures and the films are a feasible alternative to a nitrided oxide as a gate dielectric in MOS technology. An analysis of MOS capacitors with n-channel and p-channel MOSFET's indicates an increase in fixed oxide charge with an increase in nitrogen and hydrogen content in the film.