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Nonlinear characterization and modeling of carbon nanotube field-effect transistors

Authors :
Curutchet, Arnaud
Theron, Didier
Werquin, Matthieu
Ducatteau, Damien
Happy, Henri
Dambrine, Gilles
Bethoux, J.M.
Derycke, Vincent
Gaquiere, Christophe
Source :
IEEE Transactions on Microwave Theory and Techniques. July, 2008, Vol. 56 Issue 7, p1505, 6 p.
Publication Year :
2008

Abstract

We report for the first time to our knowledge large-signal measurements performed at 600 MHz and in time domain on carbon nanotube field-effect transistors (CNFETs) using a large-signal network analyzer. To overcome the very high mismatch between the high CNFET impedance and the basic 50-[ohm] configuration of the setup, the output impedance was matched with the help of an experimental active load-pull configuration. Hence, we were able to observe under large-signal conditions the nonlinear behavior of CNFETs. Static measurements and continuous-wave S/j-parameter measurements were made for many different biases. They were used in order to determine a nonlinear electrical model that has been validated thanks to the nonlinear measurements. The developed model opens the way for electrical CNFET circuit simulation and nonlinear applications of these devices. Index Terms--Carbon nanotube field-effect transistor (CNFET), large-signal network analyzer (LSNA), neuronal modeler, non-linear model.

Details

Language :
English
ISSN :
00189480
Volume :
56
Issue :
7
Database :
Gale General OneFile
Journal :
IEEE Transactions on Microwave Theory and Techniques
Publication Type :
Academic Journal
Accession number :
edsgcl.182081105