Amorphous Ge quantum dots embedded in Si[O.sub.2] formed by low energy ion implantation

Authors :: Zhao, J.P.
Huang, D.X.
Chen, Z.Y.
Chu, W.K.
Makarenkov, B.
Jacobson, A.J.
Bahrim, B.
Rabalais, J.W.
Source :: Journal of Applied Physics. June 15, 2008, Vol. 103 Issue 12, 124304-1-124304-10
Publication Year :: 2008
Abstract: Transmission electron microscopy (TEM) images and micro-Raman scattering are used for studying the confined Ge nanodot formation at room temperature (RT) by [super 74][Ge.sup.+] implantation at very low kinetic energy. The morphology of amorphous Ge nanodots is modified by varying the temperature during ion implantation.

Subjects :: Germanium -- Electric properties
Germanium -- Thermal properties
Quantum electrodynamics -- Analysis
Raman effect -- Analysis
Transmission electron microscopes -- Usage
Physics

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