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Amorphous Ge quantum dots embedded in Si[O.sub.2] formed by low energy ion implantation

Authors :
Zhao, J.P.
Huang, D.X.
Chen, Z.Y.
Chu, W.K.
Makarenkov, B.
Jacobson, A.J.
Bahrim, B.
Rabalais, J.W.
Source :
Journal of Applied Physics. June 15, 2008, Vol. 103 Issue 12, 124304-1-124304-10
Publication Year :
2008

Abstract

Transmission electron microscopy (TEM) images and micro-Raman scattering are used for studying the confined Ge nanodot formation at room temperature (RT) by [super 74][Ge.sup.+] implantation at very low kinetic energy. The morphology of amorphous Ge nanodots is modified by varying the temperature during ion implantation.

Details

Language :
English
ISSN :
00218979
Volume :
103
Issue :
12
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.182176659