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Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum
- Source :
- Journal of Applied Physics. June 15, 2008, Vol. 103 Issue 12, 124505-1-124505-4
- Publication Year :
- 2008
-
Abstract
- The fabrication and characterization of stable negative differential resistance (NDR) devices based on tris(8-hydroxyquinoline) aluminum ([Alq.sub.3]) are described. The studies have shown that injection of holes in these devices have played a vital role in NDR and resistive switching processes.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 103
- Issue :
- 12
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.182176789