High-performance InP-based enhancement-mode HEMT's using non-alloyed ohmic contacts and Pt-based buried-gate technologies

A high performance InP-based enhancement-mode high electron mobility transistor (E-HEMT) fabrication involves the use of non-alloyed ohmic contacts and Pt-based buried gate technologies. The technique lowers the source resistance. An E-HEMT with a 0.5 micrometer gate shows a minimum transconductance of 1170 millisecond/millimeter. The fabrication procedure involves making depletion-mode HEMT's first and then later annealing them at 250 degrees celsius to give E-HEMT's. The process maintains the source resistance at about 0.2 ohm-millimeters.