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Copper precipitation in nitrogen-doped Czochralski silicon
- Source :
- Journal of Applied Physics. July 1, 2008, Vol. 104 Issue 1, 013508-1-013508-4
- Publication Year :
- 2008
-
Abstract
- Transmission electron microscopy and optical microscopy are used for examining the copper (Cu) precipitation behaviors in p-type conventional Czochralski (CZ) and nitrogen-doped Czochralski (NCZ) silicon. The formation of Cu precipitate colonies in NCZ silicon is described in terms of the effect of large grown-in oxygen precipitates on Cu precipitation.
- Subjects :
- Copper -- Electric properties
Copper -- Chemical properties
Copper -- Optical properties
Silicon compounds -- Electric properties
Silicon compounds -- Chemical properties
Silicon compounds -- Optical properties
Transmission electron microscopes -- Usage
Nitrogen compounds -- Electric properties
Nitrogen compounds -- Chemical properties
Nitrogen compounds -- Optical properties
Physics
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 104
- Issue :
- 1
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.184097067