High-voltage-gain CMOS LNA for 6-8.5-GHz UWB receivers

The design of a fully integrated CMOS low noise amplifiers (LNA) for ultra-wide-band (UWB) integrated receivers is presented. An original LC input matching cell architecture enables fractional bandwidths of about 25%, with practical values, that match the new ECC 6-8.5-GHz UWB frequency band. An associated design method which allows low noise figure and high voltage gain is also presented. Measurements results on an LNA prototype fabricated in a 0.13-[micro]m standard CMOS process show average voltage gain and noise figure of 29.5 and 4.5 dB, respectively. Index Terms--Low-noise amplifiers (LNAs), ultra wide band (UWB), CMOS integrated circuits.