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Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes
- Source :
- IEEE Transactions on Electron Devices. August, 2008, Vol. 55 Issue 8, p1841, 6 p.
- Publication Year :
- 2008
-
Abstract
- The simulation and fabrication of high-voltage 4H-SiC PiN diodes with an improved junction termination structure are described. The junction termination voltage (JTE) region is optimized by device simulation and the JTE dose dependence of the breakdown voltage is compared with experimental results.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 8
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.184772920