3C-Silicon carbide nanowire FET: an experimental and theoretical approach

The electronic transport in ballistic and diffusive 3C-SiC nanowire field-effect transistors (NWFETs) are examined by using a homemade 3-dimensional (3-D) quantum-mechanical simulation code and a commercial tool. In the ballistic regime, devices with undoped SiC NWs have displayed superior theoretical performances based on their simulated characteristics.