Investigation on the use of nitrogen implantation to improve the performance of N-channel enhancement 4H-SiC MOSFETs

N-channel enhancement MOSFETs and MOS capacitors are fabricated on 4H-SiC by using gate oxide processes based on N ion implantation and reduced thermal-budget wet oxidation. The studies have shown that N ion implantation before the gate oxidation is a suitable way to reduce the density of the Si[O.sub.2]/SiC interface states responsible of the channel conductivity decrease in the n-MOSFET.